421.Which of the diode circuit shows correct biasing used for the measurement of dynamic resistance of p−n junction diode:- (1)
- (2)
- (3)
- (4)
422.Given below are two statements : One is labelled as Assertion A and the other is labelled as Reason R. Assertion A : n-p-n transistor permits more current than a p-n-p transistor. Reason R : Electrons have greater mobility as a charge carrier. Choose the correct answer from the options given below:- (1)Both A and R true, and R is correct explanation of A.
- (2)Both A and R are true but R is NOT the correct explanation of A.
- (3)A is true but R is false.
- (4)A is false but R is true.
423.When phosphorus and antimony are mixed in germanium, then [2003]- (1)p‐type semiconductor is formed
- (2)n‐type semiconductor is formed
- (3)Both (a) and (b)
- (4)None of these
424.The reverse biasing in a p‐n junction diode: [2003]- (1)Decreases the potential barrier
- (2)Increases the potential barrier
- (3)Increases the number of minority charge carriers
- (4)Increases the number of majority charge carriers
425.For a transistor to act a switch, it must be operated in- (1)Active region
- (2)Saturation state only
- (3)Cut – off state only
- (4)Saturation and cut-off state
426.In an unbiased p−n junction- (1)potential at p is equal to that at n
- (2)potential at p is +ve and that at n is -ve
- (3)potential at p is more than that at n
- (4)potential at p is less than that at n.
427.In case of NPN‐transistors the collector current is always less than the emitter current because [2010]- (1)collector side is reverse biased and emitter side is forward biased
- (2)a few electrons are lost in the base and only remaining ones reach the collector
- (3)collector side is forward biased and emitter side is reverse biased
- (4)collector being reverse biased attracts less electrons
428.If ne and nh are electron and hole concentrations in an extrinsic semiconductor and ni is electron concentrations in an intrinsic semiconductor, then- (1)(nhne)=ni
- (2)(ne+nh)=ni
- (3)(ne−nh)=ni2
- (4)nenh=ni2
429.Current in the circuit will be [2001]- (1)405A
- (2)505 A
- (3)105A
- (4)205 A
430.The given circuit works as :- (1)AND gate
- (2)NAND gate
- (3)NOR gate
- (4)OR gate
431.The truth table given below is for A0011B0101Y1110 ( A and B are the inputs, Y is the output)- (1)NOR
- (2)AND
- (3)XOR
- (4)NAND
432.For emission of light, a light emitting diode (LED) is- (1)always used in reverse biased condition.
- (2)never used in forward or reverse biased condition.
- (3)used both in forward and reverse biased condition depending upon its application.
- (4)always used in forward biased condition.
433.The device that act as a complete electronic circuit is- (1)junction diode
- (2)integrated circuit
- (3)junction transistor
- (4)Zener diode
434.The circuit shown below acts as [2005]- (1)high pass filter
- (2)low pass filter
- (3)tuned filter
- (4)rectifier
435.The circuit is equivalent to [2008]- (1)AND gate
- (2)NAND gate
- (3)NOR gate
- (4)OR gate
436.For using a multimeter to identify diode from electrical components, choose the correct statement out of the following about the diode :- (1)It is two terminal device which conducts current in both directions.
- (2)It is two terminal device which conducts current in one direction only
- (3)It does not conduct current gives an initial deflection which decays to zero.
- (4)It is three terminal device which conducts current in ne direction only between central terminal and either of the remaining two terminals
437.The output of given logic circuit is- (1)A⋅(B+C)
- (2)A⋅(B⋅C)
- (3)(A+B)⋅(A+C)
- (4)A+B+C
438.In a p‐n junction diode, change in temperature due to heating [2018]- (1)affects only reverse resistance
- (2)affects only fo1ward resistance
- (3)does not affect resistance of p‐n junction
- (4)affects the overall V−I characteristics of p‐n junction
439.The device that can detect optical signals is- (1)zener diode
- (2)photodiode
- (3)light emitting diode
- (4)transistor
440.For a common base configuration of PNP transistor lElc=0.96, then maximum current gain in common emitter configuration will be [2002]- (1)12
- (2)24
- (3)6
- (4)5
441.Find the truth table for the function Y of A and B represented in the following figure.- (1)ABY000011100110
- (2)ABY001010101111
- (3)ABY000010100111
- (4)ABY000011101111
442.In the following circuit, the correct relation between output (Y) and inputs A and B will be :- (1)Y = AB
- (2)Y = A + B
- (3)Y=AB
- (4)Y=A+B
443.The I−V characteristics of an electronic device shown in the figure. The device is:- (1)a diode which can be used as a rectifier
- (2)a zener diode which can be used as a voltage regulator
- (3)a transistor which can be used as an amplifier
- (4)a solar cell
444.Identify the logic operation carried out by the following circuit.- (1)AND
- (2)NAND
- (3)NOR
- (4)OR
445.The truth table corresponding to the circuit given below is:- (1)A
B C 0 0 0 0 1 0 1 0 1 1 1 1 - (2)A
B C 0 0 1 1 0 0 0 1 0 1 1 0 - (3)A
B C 0 0 1 0 1 0 1 0 0 1 1 0 - (4)A
B C 0 0 0 1 0 0 0 1 0 1 1 1
446.The Boolean expression Y=ABC+AC can be realised with which of the following gate configurations. (A) One 3-input AND gate, 3 NOT gates and one 2-input OR gate, One 2-input AND gate,(B) One 3 -input AND gate, 1 NOT gate, One 2 input NOR gate and one 2 -input OR gate(C) 3 -input OR gate, 3 NOT gates and one 2 input AND gate Choose the correct answer from the options given below:- (1)B, C Only
- (2)A, B, C Only
- (3)A, B Only
- (4)A, C Only
447.Identify the logic operation carried out by the given circuit :-- (1)OR
- (2)AND
- (3)NOR
- (4)NAND
448.Identify the logic operation performed by the following circuit.- (1)OR
- (2)AND
- (3)NOT
- (4)NAND
449.To get output 1 for the following circuit, the correct choice for the input is: [201ϵ]- (1)A=1,B=0,C=1
- (2)A=0,B=1,C=0
- (3)A=1,B=0,C=0
- (4)A=1,B=1,C=0
450.When a diode is forward biased, it has a voltage drop of 0.5V. The safe limit of current through the diode is 10mA. If a battery of emf 1.5V is used in the circuit, the value of minimum resistance to be connected in series with the diode so that the current does not exceed the safe limit is:- (1)50Ω
- (2)200Ω
- (3)300Ω
- (4)100Ω
|