In a semiconductor, the number density of intrinsic charge carriers at 27^0C is 1.5 x 10^16/m^3. If the semiconductor is doped with impurity atom, the hole density increases to 4.5 x 10^22/m^3. The e…

Question

In a semiconductor, the number density of intrinsic charge carriers at 27^0C is 1.5 x 10^16/m^3. If the semiconductor is doped with impurity atom, the hole density increases to 4.5 x 10^22/m^3. The electron density in the doped semiconductor is x 10^9/m^3.

Accepted Answer

Correct answer: 5. (5) n_en_h=n_i^2 n_e= n_i^2n_h= (1.5 10^16)^24.5 10^22 = 1.5 1.5 10^324.5 10^22 5 10^9/m^3

$In a semiconductor, the number density of intrinsic charge carriers at 2 7^{0} C is 1.5 x 1 0^{16} / m^{3} . If the semiconductor is doped with impurity atom, the hole density increases to 4.5 x 1 0^{22} / m^{3} . The electron density in the doped semiconductor is x 1 0^{9} / m^{3} .$

Solution

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