Consider a situation in which reverse biased current of a particular P-N junction increases when it is exposed to a light of wavelength 621 nm. During this process, enhancement in carrier concentrati…

Question

Consider a situation in which reverse biased current of a particular P-N junction increases when it is exposed to a light of wavelength 621 nm. During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly.

Accepted Answer

Correct answer: A. (a) Band gap = hc _0 _0; threshold wavelength Band gap = 1242 ev- nm621 mm=2 eV

$Consider a situation in which reverse biased current of a particular P-N junction increases when it is exposed to a light of wavelength \leq 621 nm . During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly.$

Solution

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